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| data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 1 general description the ap1662 is an active power factor control ic which is designed mainly for use as a pre-converter in electronic ballast, ac-dc adapter and off-line smps applications. . the ic includes an inte rnal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure dcm boundary conduction operation. the totem pole output stage is capable of driving power mosfet with 600ma source current and 800ma sink current. designed with advanced bicmos process, the ap1662 features low start-up current, low operation current and low power dissi pation. the ap1662 also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current. the ap1662 meets iec61000-3-2 standard even at one-quadrant load and thd lower than 10% at high-end line voltage and full load. the ic is available in soic-8 and dip-8 packages. features ? comply with iec61000-3-2 standard ? proprietary design for minimum thd ? zero current detection control for dcm boundary conduction mode ? adjustable output voltage with precise over-voltage protection ? low start-up current with 40 a typical value ? low quiescent current with 2.5ma typical va lu e ? 1% precision internal reference voltage @ t j =25c ? internal start-up timer ? disable function for reduced current consumption ? totem pole output with 600ma source and 800ma sink current capability ? under-voltage lockout with 2.5v hysteresis applications ? electronic ballast ? ac-dc adapter ? off-line smps ? single stage pfc led driver figure 1. package types of ap1662 soic-8 dip-8
data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 2 1 2 3 4 8 7 6 5 pin configuration m package soic-8 inv vcc comp gd mult gnd cs zcd p package dip-8 inv vcc comp gd mult gnd cs zcd figure 2. pin configurat ion of ap1662 (top view) 1 2 3 4 8 7 6 5 data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 3 pin description pin number pin name function 1 inv inverting input of the error amplifier 2 comp output of the error amplifier 3 mult input of the multiplier 4 cs input of the current control loop comparator 5 zcd zero current detection input. if it is connected to gnd, the device is disabled 6 gnd ground. current return for gate driver and control circuits of the ic 7 gd gate driver output 8 vcc supply voltage of gate driver and control circuits of the ic functional block diagram figure 3. functional block diagram of ap1662 data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 4 ordering information ap1662 - circuit type e1: lead free g1: green package blank: tube m: soic-8 tr: tape & reel p: dip-8 package temperature range part number marking id packing type lead free green lead free green soic-8 -40 to 105 c ap1662m-e1 AP1662M-G1 1662m-e1 1662m-g1 tube ap1662mtr-e1 ap1662mtr-g1 1662m-e1 1662m-g1 tape & reel dip-8 -40 to 105 c ap1662p-e1 ap1662p-g1 ap1662p -e1 ap1662p-g1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with ?g1? suffix are available in green packages. data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v cc self-limited v operating supply current i cc 30 ma input/output of error amplifier, input of multiplier v inv , v comp , v mult -0.3 to 7 v current sense input v cs -0.3 to 7 v zero current detector input i zcd source -50 ma sink 10 power dissipation and thermal characteristics @ t a =50 c p tot dip-8 1 w soic-8 0.65 thermal resistance (junction to ambient) r ja dip-8 100 o c/w soic-8 150 operating junction temperature t j -40 to 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c esd (human body model) v esd(hbm) 3000 v esd (machine model) v esd(mm) 200 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 6 electrical characteristics v cc =12v, t j =-25c to 125c, c o =1nf, unless otherwise specified. parameter symbol test conditions min typ max unit under voltage lockout section turn-on threshold v cc-on v cc rising 11 12 13 v turn-off threshold v cc-off v cc falling 8.7 9.5 10.3 v hysteresis v cc-hys 2.2 2.5 2.8 v v cc operating range v cc after turn-on 10.3 22 v zener voltage v z i cc =20ma 22 24 v total supply current section start-up current i start-up v cc =11v before turn-on 40 70 a operating supply current i cc frequency=70khz 3.5 5 ma in ovp condition v inv =2.7v 1.4 2.2 quiescent current i q after turn on 2.5 3.75 ma quiescent current i q v zcd 150mv, v cc >v cc-off 2.2 ma v zcd 150mv, v cc data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) v cc =12v, t j =-25c to 125c, c o =1nf, unless otherwise specified. parameter symbol test conditions min typ max unit drive output section dropout voltage v oh i gd-source =200ma 2.5 3 v i gd-source =20ma 2 2.8 v ol i gd-sink =200ma 0.9 1.9 output voltage rise time t r 40 80 ns output voltage fall time t f 30 70 ns output clamp voltage v o-clamp i gd-source =5ma v cc =20v 9 11 13 v uvlo saturation v os v cc =0 to v cc-on , i sin k =10ma 1.1 v output over voltage section ovp triggering current i ovp 35 40 45 a static ovp threshold v ovp_th 2.1 2.25 2.4 v starter start timer period t start 75 130 300 s data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 9 typical performance characteristics figure 4. supply current vs. supply voltage figure 5. start-up & uvlo vs. t j figure 6. i cc consumption vs. t j figure 7. v cc zener voltage vs. t j -50 0 50 100 150 22 23 24 25 26 27 28 v cc-clamp (v) junction temperature ( o c) -50 0 50 100 150 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 voltage (v) v cc-on junction temperature ( o c) v cc-off 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 c o =1nf f=70khz t j =25 o c supply current (ma) supply voltage (v) -50 0 50 100 150 0.03125 0.0625 0.125 0.25 0.5 1 2 4 8 v cc =12v c o =1nf f=70khz quiescent disabled or during ovp junction temperature ( o c) i cc (ma) before start-up data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) figure 8. feedback reference voltage vs. t j figure 9. ovp current vs. t j figure 10. delay-to-output vs. t j figure 11. e/a output clamp levels vs. t j -50 0 50 100 150 0 100 200 300 400 500 junction temperature ( o c) t d(h-l) (ns) v cc =12v -50 0 50 100 150 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v cc =12v junction temperature ( o c) v comp (v) lower clamp upper clamp -50 0 50 100 150 39.0 39.5 40.0 40.5 41.0 41.5 42.0 42.5 43.0 junction temperature ( o c) i ovp ( a) v cc =12v -50 0 50 100 150 2.40 2.45 2.50 2.55 2.60 junction temperature ( o c) v ref (v) v cc =12v data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 12. v cs-clamp vs. t j figure 13. multiplier gain vs. t j figure 14. zcd source capability vs. t j figure 15. zcd clamp levels vs. t j -50 0 50 100 150 0 1 2 3 4 5 6 7 lower clamp junction temperature ( o c) v zcd (v) v cc =12v i zcd = + 2.5ma upper clamp -50 0 50 100 150 1.0 1.2 1.4 1.6 1.8 2.0 junction temperature ( o c) v cs-clamp (v) v cc =12v v comp =upper clamp -50 0 50 100 150 -8 -6 -4 -2 0 junction temperature ( o c) i zcd (ma) v cc =12v v zcd =lower clamp -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 junction temperature ( o c) multiplier gain v cc =12v v comp =4v v mult =1v data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 16. start-up timer vs. t j figure 17. multiplier characteristics figure 18. gate-driver ou tput low saturation figure 19. gate-driver ou tput high saturation 0 200 400 600 800 1000 0 1 2 3 4 5 6 v gd (v) i gd (ma) t j =25 o c v cc =11v sink -50 0 50 100 150 120 130 140 150 160 170 180 190 200 junction temperature ( o c) t start ( s) v cc =12v 0.00.51.01.52.02.53.03.54.04.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v comp =max v comp =5.0 v comp =4.5 v comp =4.0 v comp =3.5 v comp =3.2 v comp =3.0 v comp =2.8 v mult (v) v cs (v) v comp =2.6 0 100 200 300 400 500 600 700 v gd (v) v cc -4.0 v cc -3.5 v cc -3.0 v cc -2.5 i gd (ma) t j =25 o c v cc =11v source v cc -2.0 data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) figure 20. gate-driver clamp vs. t j figure 21. uvlo saturation vs. t j -50 0 50 100 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 junction temperature ( o c) v gd_off (v) v cc =0v -50 0 50 100 150 10 11 12 13 14 15 junction temperature ( o c) v gd_clamp (v) v cc =20v data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 14 functional block description ap1662 is a high performance power factor correction controller wh ich operates in dcm boundary conduction mode. the pfc converter's switch will be turned on when the inductor current reduces to zero and turned off when the sensed inductor current reaches th e required reference which is decided by the output of multiplier. error amplifier and over-voltage protection the error amplifier regulates the pfc output voltage. the internal reference on the non-inverting input of the error amplifier is 2.5v. the error amplifier's inverting input (inv) is connected to an external resistor divider which senses the output voltage. the output of error amplifier is one of the two inputs of multiplier. a compensation loop is connected outside between inv and the error amplifier output. normally, the compensation loop bandwidth is set very low to realize high power factor for pfc converter. to make the over voltage protection fast, the internal ovp function is added. if the output over voltage happens, excess current will flow into the output pin of the error amplifier through the feedback compensation capacito r. (see figure 22) the ap1662 monitors the current flowi ng into the error amplifier output pin. when the detected current is higher than 40a, the dynamic ovp is triggered. the ic will be figure 22. error amplifier and ovp block disabled and the drive signal is stopped. if the output over voltage lasts so long that the output of error amplifier goes below 2.25v, static ovp will take place. also the ic will be disabled until the output of error amplifier goes back to its linear region. r1 and r2 (see fig. 22) will be selected as below: 1 5 . 2 2 1 ? = v v r r o a v r ovp 40 1 ? = multiplier the multiplier has two inputs. one (pin 3) is the divided ac sinusoidal voltage which makes the current sense comparator threshold voltage vary from zero to peak value. the other input is the output of error amplifier (pin 2). in this way, the input average current wave will be sinusoidal as well as reflects the load status. accordingly a high power factor and good thd are achieved. the multiplier transfer character is designed to be linear over a wide dynamic range, namely, 0v to 3v for pin 3 and 2v to 5.8v for pin 2. the relationship between the multiplier output and inputs is described as below equation mult comp cs v v k v ? = ) 5 . 2 ( where v cs (multiplier output) is the reference for the current sense, k is the multiplier gain, v comp is the voltage on pin 2 (error amplifier output) and v mult is the voltage on pin 3. current sense/current sense comparator the pfc switch's turn-on current is sensed through an external resistor in series with the switch. when the sensed voltage exceeds the threshold voltage (the multiplier output), the current sense comparator will become low and the external mosfet will be turned off. this insures a cycl e-by-cycle current mode control operation. the maximum current sense reference is 1.8v. the max value usually happens at startup process or abnormal conditions such as short load. data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 15 functional block description continued zero current detection ap1662 is a dcm boundary conduction current mode pfc controller. us ually, the zero current detection (zcd) voltage signal comes from the auxiliary winding of the boost inductor. when the zcd pin voltage decreases below 1.6v, the gate drive signal becomes high to turn on the external mosfet. 500mv of hysteresis is provided to avoid false triggering. the zcd pin can be used for disabling the ic. making its voltage below 0.15v or short to the ground will disable the device thus reduce the ic supply current consumption. typical application figure 23. 85 to 265v wide range input 90w pfc demo board electrical schematic circuit data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 16 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional. data sheet high performance power f actor corrector ap1662 jul. 2012 rev. 1. 3 bcd semiconductor manufacturing limited 17 mechanical dimensions (continued) dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional. important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited |
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